- Xu, Xitong;
- Wang, Xirui;
- Cochran, Tyler A;
- Sanchez, Daniel S;
- Chang, Guoqing;
- Belopolski, Ilya;
- Wang, Guangqiang;
- Liu, Yiyuan;
- Tien, Hung-Ju;
- Gui, Xin;
- Xie, Weiwei;
- Hasan, M Zahid;
- Chang, Tay-Rong;
- Jia, Shuang
We survey the electrical transport properties of single-crystalline, topological chiral semimetal CoSi grown via different methods. High-quality CoSi single crystals were found in the growth from a tellurium solution. The sample's high carrier mobility enables us to observe quantum oscillations (QOs) in its thermoelectrical signals. Our analysis of QOs reveals two spherical Fermi surfaces around the R point in its Brillouin zone corner. The extracted Berry phases of these electron orbits are consistent with the -2 chiral charge as reported in density functional theory (DFT) calculations. A detailed analysis of the QOs reveals that the spin-orbit-coupling-induced band splitting is less than 2 meV near the Fermi level, one order of magnitude smaller than our DFT calculation. We also report a large phonon-drag-induced Nernst effect in CoSi at intermediate temperatures.