- Prasad, Bhagwati;
- Huang, Yen‐Lin;
- Chopdekar, Rajesh V;
- Chen, Zuhuang;
- Steffes, James;
- Das, Sujit;
- Li, Qian;
- Yang, Mengmeng;
- Lin, Chia‐Ching;
- Gosavi, Tanay;
- Nikonov, Dmitri E;
- Qiu, Zi Qiang;
- Martin, Lane W;
- Huey, Bryan D;
- Young, Ian;
- Íñiguez, Jorge;
- Manipatruni, Sasikanth;
- Ramesh, Ramamoorthy
Spintronic elements based on spin transfer torque have emerged with potential for on-chip memory, but they suffer from large energy dissipation due to the large current densities required. In contrast, an electric-field-driven magneto-electric storage element can operate with capacitive displacement charge and potentially reach 1-10 µJ cm-2 switching operation. Here, magneto-electric switching of a magnetoresistive element is shown, operating at or below 200 mV, with a pathway to get down to 100 mV. A combination of phase detuning is utilized via isovalent La substitution and thickness scaling in multiferroic BiFeO3 to scale the switching energy density to ≈10 µJ cm-2 . This work provides a template to achieve attojoule-class nonvolatile memories.