UC Berkeley

An inkjet-patterned, flexible organic memory array was demonstrated using non-volatile ferroelectric field-effect transistors which remained functional below 0.6% tensile strain. Each memory cell is comprised of an addressing transistor and a ferroelectric memory transistor. Less than 20% cross-talk was observed between neighboring cells, and binary memory states in a 7 × 8 array were retained for at least 8 h. Variations among the printed memory transistors were characterized and shown to be caused by different rates of charge trapping in the semiconductor-ferroelectric interface. © 2011 Elsevier B.V. All rights reserved.