High purity specimens of URu2Si2 produced by a molten metal flux technique
Abstract
We report a molten metal flux technique to produce high purity specimens of URu(Formula presented.)Si(Formula presented.). Magnetic susceptibility (Formula presented.)(Formula presented.)(Formula presented.), heat capacity (Formula presented.) and electrical resistivity (Formula presented.) measurements show that the bulk properties of these crystals are similar to those that are produced by the Czochralski technique followed by solid-state electro-transport. In particular, we find residual resistivity ratios RRR (Formula presented.)(Formula presented.)/(Formula presented.) as large as 220. © 2014 © 2014 Taylor & Francis.
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