UCLA

In this thesis, we present a graphene channel transistor based flexible and transparent memory (FTM) fabricated on Poly-ethylene-naphtalate (PEN) substrate. FTM samples were successfully fabricated through low temperature processes preventing substrate deformation. The injection of electrons into the trap sites of a triple high-k dielectric stack resulted in a memory window of more than 9.0V. The experimental results show great potential for FTM to be used as a memory cell for fully flexible and transparent electronics. Furthermore, FTM might enable making a breakthrough in innovative design for electronics that has been impossible when using stiff and opaque substrates.