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Frequency dispersion in III-V metal-oxide-semiconductor capacitors
Abstract
A recombination-controlled tunneling model is used to explain the strong frequency dispersion seen
in the accumulation capacitance and conductance of dielectric/n-In0.53Ga0.47As metal-oxidesemiconductor
capacitors. In this model, the parallel conductance is large when, at positive gate
biases, the metal Fermi level lines up with a large density of interface states in the In0.53Ga0.47As
band gap. It is shown that the model explains in a semi-quantitative manner the experimentally
observed capacitor characteristics, including a peak in parallel conductance/frequency (Gp=x) versus
log frequency curves at positive gate bias and the dependence of the frequency dispersion on the
dielectric thickness.
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