UC Santa Cruz

Quantum dot photovoltaics have attracted much interest from researchers in recent years. They have the potential to address both costs and efficiencies of solar cells while simultaneously demonstrating novel physics. Thin-film devices inherently require less material than bulk crystalline silicon, and solution deposition removes the high energy used in fabrication processes. The ease of bandgap tunability in quantum dots through size control allows for simple graded bandgap structures, which is one method of breaking beyond the Shockley-Queisser limit. Power output can also be increased through the process of multiple exciton generation, whereby more than one electron participates in conduction after the absorption of a single photon. In this dissertation work, quantum dot photovoltaics are examined through a range of temperatures. Exploring the current-voltage-temperature parameter space provides insight into the dominant conduction mechanisms within these materials, which is largely not agreed upon. Beginning with PbS quantum dots, changes in device structure are examined by varying the capping ligand and nanoparticle size. This leads similar studies of new, germanium quantum dot devices. Through this understanding, further optimization of device structure can lead to enhanced device performance.