UC Santa Barbara

Cathodoluminescence technique combined with transmission electron microscopy (TEM-CL) has been used to characterize optical properties of dislocations in GaN epilayers. The dislocations act as nonradiative centers with different recombination rates. TEM-CL observation showed that even for the same Burgers vector of a, the dislocations show different electrical activity depending on the direction of dislocation line, i.e., the edge-type dislocation parallel to the c plane is very active, while the screw-type one is less active. The simulation of the CL images gives us the information of parameters such as carrier lifetime and diffusion length. (C) 2003 American Institute of Physics.