UCLA

As the relentless scaling of conventional Si CMOS transistors continues, it becomes more and more challenging to further increase device drive current and reduce leakage current and power consumption. III-V multigate non-planar channel transistors have emerged as a promising contender in the post-Si era due to its high carrier mobility and superior electrostatic control of the non-planar structure. For device design, current Technology Computer Aided Design (TCAD) modeling, however, fails to accurately predict device behaviors in decananometer dimensions. Further, for the analog/RF applications, parasitics engineering plays a determining role in an ultrathin body structure but the conventional symmetric source (S) / drain (D) architecture restricts design and optimization versatility. Moreover, for III-V transistors fabrication, the device-level co-integration capability is crucial but still not mature in current technology.

In this work, a systematic methodology is developed to calibrate TCAD hydrodynamic model against Monte Carlo (MC) simulation in the quasi-ballistic regime. Good fits of both IDS-VGS and IDS-VDS curves have been demonstrated at various device dimensions. This methodology facilitates an accurate and time-efficient device simulation. Secondly, we explore a GaAs accumulation mode vertical transistor for asymmetric S/D design and optimization. Separate control of S/D spacer thickness and underlap length can be implemented and their individual impact on analog performance is discussed. Device design guidelines for different analog/RF metrics improvement are presented. Thirdly, we develop a VLSI-compatible top down process with co-integration capability in III-V multigate non-planar channel transistor fabrication. Nanowires are patterned by photolithography and etching of a source substrate and transferred to another receiving substrate by transfer stamping. A VLSI cleanroom tool is used in the transfer process to accurately position nanowires. This technique yields large arrays of aligned GaAs nanowires, and facilitates device-level co-integration of III-V multigate non-planar channel transistors on the same substrate with close proximity and overlay accuracy.