Described is a secure, multi-time programmable memory (MTPM) solution for the 14 nm FINFET node and beyond, which turns as-fabricated standard logic transistors into embedded non-volatile memory (eNVM) elements, without the need for any process adders or additional masks. These logic transistors, when employed as eNVM elements, are dubbed “Charge Trap Transistors” (CTTs). Outlined are the technological breakthroughs required for employing logic transistors as an MTPM. An erase technique, called “Self-heating Temperature Assisted eRase” (STAR), is introduced which enables 100% erase efficiency, as compared to <50% erase efficiency using conventional methods, in turn enabling MTPM functionality in CTTs. For the first time, hardware results demonstrate an endurance of >104 program/erase cycles. Data retention lifetime of >10 years at 125°C and scalability to 7 nm have been confirmed.