- Kushwaha, SK;
- Pletikosić, I;
- Liang, T;
- Gyenis, A;
- Lapidus, SH;
- Tian, Yao;
- Zhao, He;
- Burch, KS;
- Lin, Jingjing;
- Wang, Wudi;
- Ji, Huiwen;
- Fedorov, AV;
- Yazdani, Ali;
- Ong, NP;
- Valla, T;
- Cava, RJ
A long-standing issue in topological insulator research has been to find a bulk single crystal material that provides a high-quality platform for characterizing topological surface states without interference from bulk electronic states. This material would ideally be a bulk insulator, have a surface state Dirac point energy well isolated from the bulk valence and conduction bands, display quantum oscillations from the surface state electrons and be growable as large, high-quality bulk single crystals. Here we show that this material obstacle is overcome by bulk crystals of lightly Sn-doped Bi1.1Sb0.9Te2S grown by the vertical Bridgman method. We characterize Sn-BSTS via angle-resolved photoemission spectroscopy, scanning tunnelling microscopy, transport studies, X-ray diffraction and Raman scattering. We present this material as a high-quality topological insulator that can be reliably grown as bulk single crystals and thus studied by many researchers interested in topological surface states.