P-channel, backside illuminated silicon CCDs were developed and fabricated on high-resistivity n-type silicon. Devices have been exposed up to 1x1011 protons/cm2 at 12 MeV. The charge transfer efficiency and dark curent were measured as a function of radiation dose. These CCDs were found to be significantly more radiation tolerant than conventional n-channel devices. This could prove to be a major benefit for long duration space missions.