Fourier ptychography is a computational imaging techniques that combines various full-field coherent images acquired under varied illumination angles and combined to yield a angular spectrum with a large synthetic numerical aperture and non-interferometric phase information. We present here the implementation of this technique in a full-field soft x-ray microscope designed to emulate modern EUV lithography tools imaging conditions, and we show that this technique can be used for the study of EUV photomasks. The technique allows us to quantitatively characterize phase defects (predominant in EUV lithography), to study new mask designs made of phase structures, to study sub-resolution assist features and extend the resolution of the microscope down to 26-nm, correspond to the N1 technology node.

We demonstrate a method for characterizing the field-dependent aberrations of a full-field synchrotron-based extreme ultraviolet microscope. The statistical uniformity of the inherent, atomic-scale roughness of readily-available photomask blanks enables a self-calibrating computational procedure using images acquired under standard operation. We characterize the aberrations across a 30-um field-of-view, demonstrating a minimum aberration magnitude of smaller than [Formula: see text] averaged over the center 5-um area, with a measurement accuracy better than [Formula: see text]. The measured field variation of aberrations is consistent with system geometry and agrees with prior characterizations of the same system. In certain cases, it may be possible to additionally recover the illumination wavefront from the same images. Our method is general and is easily applied to coherent imaging systems with steerable illumination without requiring invasive hardware or custom test objects; hence, it provides substantial benefits when characterizing microscopes and high-resolution imaging systems in situ.

An approach to image-based EUV aberration metrology using binary mask targets and iterative model-based solutions to extract both the amplitude and phase components of the aberrated pupil function is presented. The approach is enabled through previously developed modeling, fitting, and extraction algorithms. We seek to examine the behavior of pupil amplitude variation in real-optical systems. Optimized target images were captured under several conditions to fit the resulting pupil responses. Both the amplitude and phase components of the pupil function were extracted from a zone-plate-based EUV mask microscope. The pupil amplitude variation was expanded in three different bases: Zernike polynomials, Legendre polynomials, and Hermite polynomials. It was found that the Zernike polynomials describe pupil amplitude variation most effectively of the three.

The Semiconductor High-Numerical-aperture (NA) Actinic Reticle Review Project (SHARP) is an extreme ultraviolet (EUV)-wavelength, synchrotron-based microscope dedicated to advanced EUV photomask research. The instrument is designed to emulate current and future generations of EUV lithography (EUVL). The performance of the SHARP microscope has been well characterized for its low-NA lenses, emulating imaging in 0.25 and 0.33NA lithography scanners. Evaluating the resolution of its higher-NA lenses, intended to emulate future generations of EUV lithography, requires a photomask with features down to 22-nm half pitch. The authors fabricated a sample with features down to 20-nm half pitch, exposing a wafer with a standard multilayer coating in the Berkeley microfield exposure tool, and used it to demonstrate real-space imaging down to 22-nm half pitch on the SHARP microscope. The demonstrated performance of SHARP's high-NA zoneplates, together with the extended capabilities of the tool, provide a platform that is available today, suited for research targeted at upcoming generations of EUVL many years into the future.

Aberration characterization plays a critical role in the development of any optical system. State-of-the-art lithography systems have the tightest aberration tolerances. We present an approach to image-based pupil plane amplitude and phase characterization using models built with a space-domain basis, in which aberration effects are separable. A polynomial model is constructed between the projections of the image intensity for chosen binary mask targets onto this basis and pupil amplitude or phase variation. This method separates model building and pupil characterization into two distinct steps, thus enabling rapid pupil characterization following data collection. The basis is related to both the transmission cross-coefficient function and the principal components of the image intensity. The pupil plane variation of a zone-plate lens from the Semiconductor High-NA Actinic Reticle Review Project (SHARP) at Lawrence Berkeley National Laboratory is examined using this method. Results are compared to pupil plane characterization using a previously proposed methodology where inverse solutions are obtained through an iterative process involving least-squares regression.

The SHARP high-numerical aperture actinic reticle review project is a synchrotron-based, extreme ultraviolet (EUV) microscope dedicated to photomask research. SHARP emulates the illumination and imaging conditions of current EUV lithography scanners and those several generations into the future. An anamorphic imaging optic with increased mask-side numerical aperture (NA) in the horizontal and increased demagnification in the vertical direction has been proposed to overcome limitations of current multilayer coatings and extend EUV lithography beyond 0.33 NA. Zoneplate lenses with an anamorphic 4×/8× NA of 0.55 are fabricated and installed in the SHARP microscope to emulate anamorphic imaging. SHARP's Fourier synthesis illuminator with a range of angles exceeding the collected solid angle of the newly designed elliptical zoneplates can produce arbitrary angular source spectra matched to anamorphic imaging. A target with anamorphic dense features down to 50-nm critical dimension is fabricated using 40 nm of nickel as the absorber. In a demonstration experiment, anamorphic imaging at 0.55 4×/8× NA and 6 deg central ray angle (CRA) is compared with conventional imaging at 0.5 4× NA and 8 deg CRA. A significant contrast loss in horizontal features is observed in the conventional images. The anamorphic images show the same image quality in the horizontal and vertical directions.