1,8-Diiodooctane (DIO) is a high boiling point solvent additive commonly used to control the active layer morphology of bulk-heterojunction organic photovoltaic (OPV) films. OPV devices fabricated using DIO often show improved efficiency, but recent studies have suggested that light exposure may cause residual DIO to react with OPV materials. We use NMR to quantify the amount of residual DIO in bulk heterojunction (BHJ) layers, finding that after a typical thermal evaporator high vacuum cycle DIO is still easily observed. This suggests that most completed devices contain trapped DIO. While OPV devices processed without DIO remain stable, devices processed with DIO rapidly degrade under illumination, even if they had undergone sequential heating and vacuum steps to remove the DIO impurity. These results suggest that impurities that can act as radical initiators, such as DIO, can be detrimental even at concentrations as low as 20 ppm by mass.

Organic electronics promise to provide flexible, large-area circuitry such as photovoltaics, displays, and light emitting diodes that can be fabricated inexpensively from solutions. A major obstacle to this vision is that most conjugated organic materials are miscible, making solution-based fabrication of multilayer or micro- to nanoscale patterned films problematic. Here we demonstrate that the solubility of prototypical conductive polymer poly(3-hexylthiophene) (P3HT) can be reversibly "switched off" using high electron affinity molecular dopants, then later recovered with light or a suitable dedoping solution. Using this technique, we are able to stack mutually soluble materials and laterally pattern polymer films by evaporation or with light, achieving sub-micrometer, optically limited feature sizes. After forming these structures, the films can be dedoped without disrupting the patterned features; dedoped films have identical optical characteristics, charge carrier mobilities, and NMR spectra as as-cast P3HT films. This method greatly simplifies solution-based device fabrication, is easily adaptable to current manufacturing workflows, and is potentially generalizable to other classes of materials.

Doping-induced solubility control (DISC) patterning is a recently developed technique that uses the change in polymer solubility upon doping, along with an optical dedoping process, to achieve high-resolution optical patterning. DISC patterning can produce features smaller than predicted by the diffraction limit; however, no mechanism has been proposed to explain such high resolution. Here, we use diffraction to spatially modulate the light intensity and determine the dissolution rate, revealing a superlinear dependence on light intensity. This rate law is independent of wavelength, indicating that patterning resolution is not dominated by an optical dedoping reaction, as was previously proposed. Instead we show here that the optical patterning mechanism is primarily controlled by the thermal profile generated by the laser. To quantify this effect, the thermal profile and dissolution rate are modeled using a finite-element model and compared against patterned line cross sections as a function of wavelength, laser intensity, and dwell time. Our model reveals that although the laser-generated thermal profile is broadened considerably beyond the profile of the laser, the highly temperature dependent dissolution rate results in selective dissolution near the peak of the thermal profile. Therefore, the key factor in achieving super-resolution patterning is a strongly temperature dependent dissolution rate, a common feature of many polymers. In addition to suggesting several routes to improved resolution, our model also demonstrates that doping is not required for optical patterning of conjugated polymers, as was previously believed. Instead, we demonstrate that superlinear resolution optical patterning should be attainable in any conjugated polymer simply by tuning the solvent quality during patterning, thus extending the applicability of our method to a wide class of materials. We demonstrate the generality of photothermal patterning by writing sub-400 nm features into undoped PffBT4T-2OD.

Poly(3,4-ethylenedioxythiophene)-poly(styrenesulphonate) (PEDOT:PSS) is the most used organic hole injecting or hole transporting material. The hole carrying matrix PEDOT is highly doped by the acidic dopant PSS. When coated onto a substrate, PEDOT:PSS makes a highly uniform conductive layer and a thin (<5 nm) overlayer of PSS covers the air interface. Semiconducting polymer layers for organic photovoltaics or light emitting diodes are coated on top. In this article, we demonstrate that the PSS layer will mix with almost all conjugated polymers upon thermal annealing. Depending on the Fermi energy of the polymer an electrochemical reaction can take place, p-type doping the polymer at the interface between the PEDOT:PSS and the semiconducting polymer. We use chemical and spectroscopic analysis to characterize the polymer/PSS interlayer. We show that the stable and insoluble interlayer has a great effect on the charge injection and extraction from the interface. Finally we demonstrate and electronically model organic photovoltaic devices that are fabricated using these mixed interlayers.