This paper presents a fabrication process in which all components of an in-plane piezoresistive accelerometer are fabricated simultaneously using a single mask. By dry-etching a silicon-on-insulator (SOI) wafer that has a specific resistivity, piezoresistors are defined and isolated from each other and from the bulk silicon without the pn-junctions normally required in piezoresistive sensors. In addition to simplifying the fabrication, the temperature range is also extended when compared to conventional piezoresistive accelerometers, due to the absence of pn-junctions. Single-axis accelerometers, designed for an acceleration range of 1 G to 500 G with a sensitivity of 1 mV/G, were fabricated and tested, and linear output characteristics were demonstrated. The temperature performance was also characterized. The temperature coefficient of sensitivity (TCS) was 0.3% per degree C and the temperature coefficient of offset (TCO) was 20 mG per degree C.

A fabrication process for the simultaneous shaping of arrays of glass shells on a wafer level is introduced in this paper. The process is based on etching cavities in silicon, followed by anodic bonding of a thin glass wafer to the etched silicon wafer. The bonded wafers are then heated inside a furnace at a temperature above the softening point of the glass, and due to the expansion of the trapped gas in the silicon cavities the glass is blown into three-dimensional spherical shells. An analytical model which can be used to predict the shape of the glass shells is described and demonstrated to match the experimental data. The ability to blow glass on a wafer level may enable novel capabilities including mass-production of microscopic spherical gas confinement chambers, microlenses, and complex microfluidic networks.