Aspects of electrical transport within quantum dot (QD) constituted films are discussed. It is shown that the photoemission efficiency from QD films could be improved by further electrical biasing of devices, owing to the enhancement of tunneling transport. It is also shown that experimentally obtained I-V curves could be described through a 2-step model involving (i) a the tunneing transport of electrons from an electron source, and (ii) Ohmic transport through the film, governed by a temperature (T) dependent mobility. Aspects related to future endeavors in modeling QD materials are also discussed.