- Jin, Chenhao;
- Kim, Jonghwan;
- Suh, Joonki;
- Shi, Zhiwen;
- Chen, Bin;
- Fan, Xi;
- Kam, Matthew;
- Watanabe, Kenji;
- Taniguchi, Takashi;
- Tongay, Sefaattin;
- Zettl, Alex;
- Wu, Junqiao;
- Wang, Feng
Engineering layer-layer interactions provides a powerful way to realize novel and designable quantum phenomena in van der Waals heterostructures. Interlayer electron-electron interactions, for example, have enabled fascinating physics that is difficult to achieve in a single material, such as the Hofstadter's butterfly in graphene/boron nitride (hBN) heterostructures. In addition to electron-electron interactions, interlayer electron-phonon interactions allow for further control of the physical properties of van der Waals heterostructures. Here we report an interlayer electron-phonon interaction in WSe 2 /hBN heterostructures, where optically silent hBN phonons emerge in Raman spectra with strong intensities through resonant coupling to WSe 2 electronic transitions. Excitation spectroscopy reveals the double-resonance nature of such enhancement, and identifies the two resonant states to be the A exciton transition of monolayer WSe 2 and a new hybrid state present only in WSe 2 /hBN heterostructures. The observation of an interlayer electron-phonon interaction could open up new ways to engineer electrons and phonons for device applications.