Frustrated interactions can lead to short-range ordering arising from incompatible interactions of fundamental physical quantities with the underlying lattice. The simplest example is the triangular lattice of spins with antiferromagnetic interactions, where the nearest-neighbor spin-spin interactions cannot simultaneously be energy minimized. Here we show that engineering frustrated interactions is a possible route for controlling structural and electronic phenomena in semiconductor alloys. Using aberration-corrected scanning transmission electron microscopy in conjunction with density functional theory calculations, we demonstrate atomic ordering in a two-dimensional semiconductor alloy as a result of the competition between geometrical constraints and nearest-neighbor interactions. Statistical analyses uncover the presence of short-range ordering in the lattice. In addition, we show how the induced ordering can be used as another degree of freedom to considerably modify the band gap of monolayer semiconductor alloys.

The self-assembly of nanoscale materials at the liquid-liquid interface allows for fabrication of three-dimensionally structured liquids with nearly arbitrary geometries and tailored electronic, optical, and magnetic properties. Two-dimensional (2D) materials are highly anisotropic, with thicknesses on the order of a nanometer and lateral dimensions upward of hundreds of nanometers to micrometers. Controlling the assembly of these materials has direct implications for their properties and performance. We here describe the interfacial assembly and jamming of Ti₃C₂T_x MXene nanosheets at the oil-water interface. Planar, as well as complex, programmed three-dimensional all-liquid objects are realized. Our approach presents potential for the creation of all-liquid 3D-printed devices for possible applications in all-liquid electrochemical and energy storage devices and electrically active, all-liquid fluidics that exploits the versatile structure, functionality, and reconfigurability of liquids.

The development of room-temperature sensing devices for detecting small concentrations of molecular species is imperative for a wide range of low-power sensor applications. We demonstrate a room-temperature, highly sensitive, selective, stable, and reversible chemical sensor based on a monolayer of the transition-metal dichalcogenide Re_0.5Nb_0.5S₂. The sensing device exhibits a thickness-dependent carrier type, and upon exposure to NO₂ molecules, its electrical resistance considerably increases or decreases depending on the layer number. The sensor is selective to NO₂ with only minimal response to other gases such as NH₃, CH₂O, and CO₂. In the presence of humidity, not only are the sensing properties not deteriorated but also the monolayer sensor shows complete reversibility with fast recovery at room temperature. We present a theoretical analysis of the sensing platform and identify the atomically sensitive transduction mechanism.