Materials for applications in hostile environments, such as nuclear reactors or radioactive waste immobilization, require extremely high resistance to radiation damage, such as resistance to amorphization or volume swelling. Nanocrystalline materials have been reported to present exceptionally high radiation-tolerance to amorphization. In principle, grain boundaries that are prevalent in nanomaterials could act as sinks for point-defects, enhancing defect recombination. In this paper we present evidence for this mechanism in nanograined Yttria Stabilized Zirconia (YSZ), associated with the observation that the concentration of defects after irradiation using heavy ions (Kr(+), 400 keV) is inversely proportional to the grain size. HAADF images suggest the short migration distances in nanograined YSZ allow radiation induced interstitials to reach the grain boundaries on the irradiation time scale, leaving behind only vacancy clusters distributed within the grain. Because of the relatively low temperature of the irradiations and the fact that interstitials diffuse thermally more slowly than vacancies, this result indicates that the interstitials must reach the boundaries directly in the collision cascade, consistent with previous simulation results. Concomitant radiation-induced grain growth was observed which, as a consequence of the non-uniform implantation, caused cracking of the nano-samples induced by local stresses at the irradiated/non-irradiated interfaces.

Many second phase additions to YBa₂Cu₃O_7-x (YBCO) films, in particular those that self-assemble into aligned nanorod and nanoparticle structures, enhance performance in self and applied fields. Of particular interest for additions are Ba-containing perovskites that are compatible with YBCO. In this report, we discuss the addition of Ba₂YRuO₆ to bulk and thick-film YBCO. Sub-micron, randomly oriented particles of this phase were found to form around grain boundaries and within YBCO grains in bulk sintered pellets. Within the limits of EDS, no Ru substitution into the YBCO was observed. Thick YBCO films were grown by pulsed laser deposition from a target consisting of YBa₂Cu₃O_y with 5 and 2.5 mole percent additions of Ba₂YRuO₆ and Y₂O₃, respectively. Films with enhanced in-field performance contained aligned, self-assembled Ba₂YRuO₆ nanorods and strained Y₂O₃ nanoparticle layers. A 0.9 µm thick film was found to have a self-field critical current density (J_c) of 5.1 MA/cm² with minimum J_c(Q, H=1T) of 0.75 MA/cm². Conversely, J_c characteristics were similar to YBCO films without additions when these secondary phases formed as large, disordered phases within the film. A 2.3 µm thick film with such a distribution of secondary phases was found to have reduced self-field J_c values of 3.4 MA/cm² at 75.5 K and J_c(min, Q, 1T) of 0.4 MA/cm².