Amorphous oxide semiconductor (AOS)-based Schottky diodes have been utilized for selectors in crossbar array memories to improve cell-to-cell uniformity with a low-temperature process. However, thermal instability at interfaces between the AOSs and metal electrodes can be a critical issue for the implementation of reliable Schottky diodes. Under post-fabrication annealing, an excessive redox reaction at the ohmic interface can affect the bulk region of the AOSs, inducing an electrical breakdown of the device. Additionally, structural relaxation (SR) of the AOSs can increase the doping concentration at the Schottky interface, which results in a degradation of the rectifying performance. Here, we improved the thermal stability at AOS/metal interfaces by regulating the oxygen vacancy (V_O) concentration at both sides of the contact. For a stable quasi-ohmic contact, a Cu-Mn alloy was introduced instead of a single component reactive metal. As Mn only takes up O in amorphous In-Ga-Zn-O (a-IGZO), excessive V_O generation in bulk region of a-IGZO can be prevented. At the Schottky interfaces, the barrier characteristics were not degraded by thermal annealing as the Ga concentration in a-IGZO increased. Ga not only reduces the inherent V_O concentration but also retards SR, thereby suppressing tunneling conduction and enhancing the thermal stability of devices.

Layered lithium transition-metal oxide materials, e.g., Li(Ni1- x - y Co x Mn y )O2 (NCM) and Li(Ni1- x - y Co x Al y )O2, are the most promising candidates for lithium-ion battery cathodes. They generally consist of ≈10 µm spherical particles densely packed with smaller particles (0.1-1 µm), called secondary and primary particles, respectively. The micrometer- to nanometer-sized particles are critical to the battery performance because they affect the reaction capability of the cathode. Herein, the crystal structure of the primary particles of NCM materials is revisited. Elaborate transmission electron microscopy investigations reveal that the so-called primary particles, often considered as single crystals, are in fact polycrystalline secondary particles. They contain low-angle and exceptionally stable special grain boundaries (GBs) presumably created during aggregation via an oriented attachment mechanism. Therefore, this so-called primary particle is renamed as primary-like particle. More importantly, the low-angle GBs between the smaller true primary particles cause the development of nanocracks within the primary-like particles of Ni-rich NCM cathodes after repetitive electrochemical cycles. In addition to rectifying a prevalent misconception about primary particles, this study provides a previously unknown but important origin of structural degradation in Ni-rich layered cathodes.

Orbital-selective phenomena in mutliorbital systems have received much attention due to their uniqueness as well as possible connections to other phenomena. As orbital-selectiveness is mostly related to the crystal structure, finding a new control parameter other than structure would be of significant importance. Here we report discovery of an orbital-selective doping effect in Sr2Ru1-xIrxO4 (SRIO). Our systematic electronic structure study of SRIO reveals an anomalous orbital-selective doping effect and concomitant Lifshitz transitions (LTs) in the γ band. With the help of a tight-binding calculation, we find that the orbital-selective doping effect is due to variation in the spin-orbit coupling (SOC) strength. Our findings not only elucidate the mechanism of LTs in the γ band in SRIO but may also open new avenues for novel SOC-controlled orbital-selective phenomena.