As one of the highest mobility semiconductor materials, carbon nanotubes (CNTs) have been extensively studied for use in field effect transistors (FETs). To fabricate surround-gate FETs- which offer the best switching performance-deposition of conformal, weakly-interacting dielectric layers is necessary. This is challenging due to the chemically inert surface of CNTs and a lack of nucleation sites-especially for defect-free CNTs. As a result, a technique that enables integration of uniform high-k dielectrics, while preserving the CNT's exceptional properties is required. In this work, we show a method that enables conformal atomic layer deposition (ALD) of high-k dielectrics on defect-free CNTs. By depositing a thin Ti metal film, followed by oxidation to TiO2 under ambient conditions, a nucleation layer is formed for subsequent ALD deposition of Al2O3. The technique is easy to implement and is VLSI-compatible. We show that the ALD coatings are uniform, continuous and conformal, and Raman spectroscopy reveals that the technique does not induce defects in the CNT. The resulting bilayer TiO2/Al2O3 thin-film shows an improved dielectric constant of 21.7 and an equivalent oxide thickness of 2.7 nm. The electrical properties of back-gated and top-gated devices fabricated using this method are presented.

As one of the highest mobility semiconductor materials, carbon nanotubes (CNTs) have been extensively studied for use in field effect transistors (FETs). To fabricate surround-gate FETs- which offer the best switching performance-deposition of conformal, weakly-interacting dielectric layers is necessary. This is challenging due to the chemically inert surface of CNTs and a lack of nucleation sites-especially for defect-free CNTs. As a result, a technique that enables integration of uniform high-k dielectrics, while preserving the CNT's exceptional properties is required. In this work, we show a method that enables conformal atomic layer deposition (ALD) of high-k dielectrics on defect-free CNTs. By depositing a thin Ti metal film, followed by oxidation to TiO₂ under ambient conditions, a nucleation layer is formed for subsequent ALD deposition of Al₂O₃. The technique is easy to implement and is VLSI-compatible. We show that the ALD coatings are uniform, continuous and conformal, and Raman spectroscopy reveals that the technique does not induce defects in the CNT. The resulting bilayer TiO₂/Al₂O₃ thin-film shows an improved dielectric constant of 21.7 and an equivalent oxide thickness of 2.7 nm. The electrical properties of back-gated and top-gated devices fabricated using this method are presented.

Atomically thin polycrystalline transition-metal dichalcogenides (TMDs) are relevant to both fundamental science investigation and applications. TMD thin-films present uniquely difficult challenges to effective nanoscale crystalline characterization. Here we present a method to quickly characterize the nanocrystalline grain structure and texture of monolayer WS₂ films using scanning nanobeam electron diffraction coupled with multivariate statistical analysis of the resulting data. Our analysis pipeline is highly generalizable and is a useful alternative to the time consuming, complex, and system-dependent methodology traditionally used to analyze spatially resolved electron diffraction measurements.

Molybdenum disulfide (MoS2) is a popular lamellar material with desirable properties who's form, and function can vary widely, from particles to monolayer/μm thick films and applications in semiconductors to aerospace lubricants and many more. Physical vapor deposition (PVD) is commonly used to produce dense, conformal micron thick MoS2 coatings, but lacks the ability to coat more complex geometries due to line-of-sight constraints and typically exhibit amorphous or nanocrystalline microstructures. Atomic layer deposition (ALD) has also been employed to deposit monolayer to 10's of nanometers thick lamellar solids like MoS2 & WS2 in transistor, sensors or electrocatalyst applications but not commonly for applications as solid lubricants in aerospace like their PVD counterparts. While recent work has shown that ALD MoS2 can exhibit favorable microstructures for solid lubricant applications and allows for non-line of sight deposition on complex geometries, it has not been widely adopted due to high deposition temperatures (>500 °C) that can lead to softening of steel substrates. In this work, we show one of the first applications highlighting the use of ultra-thin (5–10 nm) low temperature (∼250 °C) MoS2 coatings as a promising solid lubricant for macroscale mechanical interfaces. Post-deposition chemical conversion of ALD MoOx to MoS2 by annealing in H2S at temperatures ranging from 200 to 550 °C resulted in highly-ordered basally-oriented surface microstructures. The results from this work suggest that converted-ALD MoS2 coatings can serve as viable solid lubricants for aerospace applications requiring low-temperature processing, including those with complex geometries.

Transition metal dichalcogenides (TMDs) promise to revolutionize optoelectronic applications. While monolayer exfoliation and vapor phase growth produce extremely high quality 2D materials, direct fabrication at wafer scale remains a significant challenge. Here, we present a method that we call ‘lateral conversion’, which enables the synthesis of patterned TMD structures, with control over the thickness down to a few layers, at lithographically predefined locations. In this method, chemical conversion of a metal-oxide film to TMD layers proceeds by diffusion of precursor propagating laterally between silica layers, resulting in structures where delicate chalcogenide films are protected from contamination or oxidation. Lithographically patterned WS2 structures were synthesized by lateral conversion and analyzed in detail by hyperspectral Raman imaging, scanning electron microscopy and transmission electron microscopy. The rate of conversion was investigated as a function of time, temperature, and thickness of the converted film. In addition, the process was extended to grow patterned MoS2, WSe2, MoSe2 structures, and to demonstrate unique WS2/SiO2 multilayer structures. We believe this method will be applicable to a variety of additional chalcogenide materials, and enable their incorporation into novel architectures and devices.

To overcome electronic transport issues of layered titanates in sodium-ion batteries, we have designed and synthesized composites of lepidocrocite titanates with reduced graphene oxide through a solution-based self-assembly approach. The parent lepidocrocite titanate (K0.8[Ti1.73Li0.27]O4) was exfoliated by a soft-chemical approach and mechanical shaking. Exfoliated layered titania sheets (LTO) were then combined with reduced graphene oxide (rGO) layers to assemble into composites through flocculation. Countercations (i.e., Mg2+) were used for the self-assembly of negatively charged titania and rGO nanosheets via flocculation. The carbon content in the composites was tuned from 1 to 17% by changing the ratio of titania and rGO sheets in the mixed colloidal suspensions. Electrodes were processed with as-prepared LTO-rGO composites without any carbon additives and tested in sodium half-cell configurations. Mg+-coagulated LTO-rGO composite electrodes deliver higher capacities than electrodes prepared with coagulated titania sheets and 10% acetylene black in sodium half-cells and display good capacity retention after 50 cycles. Electrochemical impedance spectroscopy results indicate lower charge transfer resistance for LTO-14.5%rGO composites than that of coagulated titania sheets with 10% acetylene black. A power law analysis of cells containing the composites indicate a hybrid mechanism consisting of both surface and diffusional processes. A comparison with a similar system, that of dopamine-derived LTO-C heterostructures, reveal significant differences. While capacities showed a strong dependence on carbon content for the dopamine-derived materials, this was not true for the LTO-rGO composites. Instead, the highest capacity was obtained for the 14.5% rGO sample, with a lower value obtained for the 17% rGO sample. A greater proportion of the redox processes were surface rather than diffusional in nature for the LTO-rGO composites as well.

Metal carbonyls are of great importance in chemical vapor deposition (CVD), composite materials fabrication, and other near-net shape technologies. Carbonyl CVD is used for deposition of high-purity metallic and alloy coatings for which vapor pressure data is essential. In this study, we report vapor pressures of solid Ir4(CO)12 and Re2(CO)10 carbonyls measured by using the Knudsen Cell methodology using a torsion effusion thermogravimetric system. The vapor pressure of the Ir4(CO)12 exhibited incongruent vaporization, as the molecular weight (MW) of the effusing species was determined as 128 g/mol as compared to the theoretical MW of 1105 g/mol. It is proposed that the Ir4(CO)12 (s) partially decomposed (∼66%) to Ir4(CO)12(g), Ir(s), and CO(g). The Re2(CO)10 on the other hand, showed congruent behavior with Re2(CO)10(s) vaporizing to Re2(CO)10(g) in the measured temperature range. The raw data for vapor pressures was measured using two sets of Knudsen cells with different orifice sizes, and the equilibrium vapor pressures were calculated using Whitman-Motzfeldt methodology. The equilibrium vapor pressures of these carbonyls, partial pressures of gaseous species in case of decomposition, average molecular weights of the effusing gasses were determined. The vapor pressures and Gibbs energies of vaporization reactions of the two above mentioned carbonyls, as well as comparison of vaporization thermodynamics these two carbonyls with other carbonyls from Group VIB to VIIIB are presented in this paper.

Materials for nanophotonic devices ideally combine ease of deposition, very high refractive index, and facile pattern formation through lithographic templating and/or etching. In this work, we present a scalable method for producing high refractive index WS₂ layers by chemical conversion of WO₃ synthesized via atomic layer deposition (ALD). These conformal nanocrystalline thin films demonstrate a surprisingly high index of refraction (n > 3.9), and structural fidelity compatible with lithographically defined features down to ~10 nm. Although this process yields highly polycrystalline films, the optical constants are in agreement with those reported for single crystal bulk WS₂. Subsequently, we demonstrate three photonic structures - first, a two-dimensional hole array made possible by patterning and etching an ALD WO₃ thin film before conversion, second, an analogue of the 2D hole array first patterned into fused silica before conformal coating and conversion, and third, a three-dimensional inverse opal photonic crystal made by conformal coating of a self-assembled polystyrene bead template. These results can be trivially extended to other transition metal dichalcogenides, thus opening new opportunities for photonic devices based on high refractive index materials.

2D transition metal dichalcogenides (TMDs) are commonly grown by chemical vapor deposition using transition metal oxides as solid precursors. Despite the widespread use of this technique, challenges in reproducibility, coverage, and material quality are pervasive, suggestive of unknown and uncontrolled process parameters. In this communication, we demonstrate the impact of water vapor on this growth process. Our results show a direct correlation between gas phase water content and the morphology of TMD films. In particular, we show that the presence of water enhances volatilization, and therefore the vapor transport of tungsten and molybdenum oxide. Surprisingly, we find that water not only plays an important role in volatilization but is also compatible with TMD growth. In fact, carefully controlled humidity can consistently produce high quality, luminescent materials.

Lepidocrocite-type titanates that reversibly intercalate sodium ions at low potentials (∼0.6 V vs Na/Na+) are promising anode candidates for sodium-ion batteries. However, large amounts of carbon additives are often used to improve their electrical conductivity and overcome poor cycling performance in the electrode composites. To ameliorate electronic transport issues of lepidocrocite titanate (K0.8Ti1.73Li0.27O4, KTL) in sodium-ion batteries, we have designed and synthesized heterostructures of exfoliated lepidocrocite-type titanium oxide (LTO) nanosheets with alternating carbon layers via a solution-based self-assembly approach. Positively charged dopamine (Dopa) was used as the carbon precursor and intercalated between negatively charged exfoliated titania nanosheets through electrostatic interaction. Dopa-intercalated LTO was then annealed under argon to form conductive carbon layers between titania sheets. The carbon content in the heterostructures was controlled by modifying the self-assembly conditions (i.e., pH, stirring duration, and Dopa-to-LTO ratio). Electrodes were prepared using carbonized heterostructures (LTO-C) without adding more carbon to the composites and tested in sodium half-cell configurations. Higher capacities and improved capacity retention over 250 cycles and lower impedance were observed, as the carbon content of LTO-C heterostructures was increased from 0% (LTO nanosheets) to 30%. These results indicate that the self-assembly approach for 2D heterostructured electrode materials is a promising strategy to overcome electronic transport limitations of layered transition-metal oxides and improve their electrochemical performance for next-generation energy storage applications.