Head and Neck Squamous Cell Carcinoma (HNSCC) encompasses malignancies that arise in the mucosa of the upper aerodigestive tract. Recent high throughput DNA sequencing revealed HNSCC genes mutations that contribute to several cancer cell characteristics, i

Re-emergence of schistosomiasis in regions of China where control programs have ceased requires development of molecular-genetic tools to track gene flow and assess genetic diversity of Schistosoma populations. We identified many microsatellite loci in the draft genome of Schistosoma japonicum using defined search criteria and selected a subset for further analysis. From an initial panel of 50 loci, 20 new microsatellites were selected for eventual optimization and application to a panel of worms from endemic areas. All but one of the selected microsatellites contain simple tri-nucleotide repeats. Moderate to high levels of polymorphism were detected. Numbers of alleles ranged from 6 to 14 and observed heterozygosity was always >0.6. The loci reported here will facilitate high resolution population-genetic studies on schistosomes in re-emergent foci. © 2011 Xiao et al; licensee BioMed Central Ltd.

Electrostatic gating provides a powerful approach to tune the conductivity of the two-dimensional electron liquid between two insulating oxides. For the LaAlO3/SrTiO3 (LAO/STO) interface, such gating effect could be further enhanced by a strong lattice polarization of STO caused by simultaneous application of gate field and illumination light. Herein, by monitoring the discharging process upon removing the gate field, we give firm evidence for the occurrence of this lattice polarization at the amorphous-LaAlO3/SrTiO3 interface. Moreover, we find that the lattice polarization is accompanied with a large expansion of the out-of-plane lattice of STO. Photo excitation affects the polarization process by accelerating the field-induced lattice expansion. The present work demonstrates the great potential of combined stimuli in exploring emergent phenomenon at complex oxide interfaces.

The void mediated formation mechanism of Sn quantum dots in an Si matrix was analyzed. It was found that the diffusion of Sn atoms into these voids leads to an initial rapid coarsening of the quantum dots during annealing. However, as this process is not restricted to Sn, the quantum dots could be grown by controlling the formation of voids and the diffusion of materials in these voids during molecular beam epitaxy.