Charge separation is one of the most critical factors for generating solar fuels via photoelectrochemical water splitting, but it is still not well understood. This work reveals the fundamental role of charge transfer in photoanodes for achieving high charge separation efficiency. Specifically, we fabricated a particulate Ta₃N₅ photoanode by a bottom-up method. By improving the charge separation with refined necking treatment, the photocurrent is increased by two orders of magnitude. The charge separation efficiency (η_sep) is analyzed by dividing it into charge generation efficiency (Φ_gene) and transportation efficiency (Φ_trans). Necking treatment is found to substantially improve the electron transfer. Transient photovoltage (TPV) measurements based on the Dember effect is used to confirm the benefit of necking treatment in improving the charge transportation. The superior electron transfer in the necked-Ta₃N₅ electrode is further evidenced by the facile electron exchange reaction with the ferri/ferrocyanide redox couple. Moreover, cobalt phosphate is found to promote both charge separation and surface reaction, resulting in a photocurrent of 6.1 mA cm^-2 at 1.23 V vs. RHE, which is the highest response for a particulate photoanode.

Memristors are promising building blocks for the next-generation memory and neuromorphic computing systems. Most memristors use materials that are incompatible with the silicon dominant complementary metal-oxide-semiconductor technology, and require external selectors in order for large memristor arrays to function properly. Here we demonstrate a fully foundry-compatible, all-silicon-based and self-rectifying memristor that negates the need for external selectors in large arrays. With a p-Si/SiO₂/n-Si structure, our memristor exhibits repeatable unipolar resistance switching behaviour (10⁵ rectifying ratio, 10⁴ ON/OFF) and excellent retention at 300 °C. We further build three-dimensinal crossbar arrays (up to five layers of 100 nm memristors) using fluid-supported silicon membranes, and experimentally confirm the successful suppression of both intra- and inter-layer sneak path currents through the built-in diodes. The current work opens up opportunities for low-cost mass production of three-dimensional memristor arrays on large silicon and flexible substrates without increasing circuit complexity.

SignificanceDynamically understanding the microscopic processes governing ordering transformations has rarely been attained. The situation becomes even more challenging for nanoscale alloys, where the significantly increased surface-area-to-volume ratio not only opens up a variety of additional freedoms to initiate an ordering transformation but also allows for kinetic interplay between the surface and bulk due to their close proximity. We provide direct evidence of the microscopic processes controlling the ordering transformation through the surface-bulk interplay in Pt-Fe nanoalloys and new features rendered by variations in alloy composition and chemical stimuli. These results provide a mechanistic detail of ordering transformation phenomena which are widely relevant to nanoalloys as chemical ordering occurs in most multicomponent materials under suitable environmental bias.