LATTICE RELAXATION OF PRESSURE INDUCED DEEP CENTER IN GaAs:Si

LATTICE RELAXATION OF THE DX CENTERS IN Ga1-xAlxAs AND OF THE PRESSURE-INDUCED DEEP DONORS IN GaAs

EFFECT OF BORON ON THE PRESSURE INDUCED DEEP DONORS IN GAAS:SI

PRESSURE DEPENDENCE OF THE DX CENTER IN AL[SUB]0.35 GA[SUB]0.65 AS:TE

PRESSURE DEPENDENCE OF THE DX CENTER IN GA[SUB]l-X AL[SUB]X AS:TE IN THE VICINITY OF THE GAMMA-X CROSS-OVER

SPIN-ORBIT INTERACTION EFFECTS IN ZINCBLENDE SEMICONDUCTORS: AB INITIO PSEUDOPOTENTIAL CALCULATIONS

A COMPARISON OF THE PRESSURE-INDUCED DEEP DONORS IN GAAS:SI AND THE DX CENTERS IN GAALAS:SI ALLOYS

REDUCTION OF CAPTURE BARRIER HEIGHT OF PRESSURE-INDUCED DEEP DONORS (DX CENTERS) IN GAAS:SI

PRESSURE DEPENDENCE OF SCHOTTKY BARRIER HEIGHT AT PT/GAAS INTERFACE

Photocapacitance Study of Pressure Induced Deep Donors in GaAs:Si