Bulk heterojunction photodiodes are fabricated using a new donor-acceptor polymer with a near-infrared absorption edge at 1.2 μm, achieving a detectivity up to 10¹² Jones at a wavelength of 1 μm and an excellent linear dynamic range of 86 dB. The photodiode detectivity is maximized by operating at zero bias to suppress dark current, while a thin 175 nm active layer is used to facilitate charge collection without reverse bias. Analysis of the temperature dependence of the dark current and spectral response demonstrates a 2.8-fold increase in detectivity as the temperature was lowered from 44 to -12 °C, a relatively small change when compared to that of inorganic-based devices. The near-infrared photodiode shows a switching speed reaching up to 120 μs without an external bias. An application using our NIR photodiode to detect arterial pulses of a fingertip is demonstrated.

Infrared organic photodetector materials are investigated using transient absorption spectroscopy, demonstrating that ultrafast charge generation assisted by polymer aggregation is essential to compensate for the energy gap law, which dictates that excited state lifetimes decrease as the band gap narrows. Short sub-picosecond singlet exciton lifetimes are measured in a structurally related series of infrared-absorbing copolymers that consist of alternating cyclopentadithiophene electron-rich “push” units and strong electron-deficient “pull” units, including benzothiadiazole, benzoselenadiazole, pyridalselenadiazole, or thiadiazoloquinoxaline. While the ultrafast lifetimes of excitons localized on individual polymer chains suggest that charge carrier generation will be inefficient, high detectivity for polymer:PC71BM infrared photodetectors is measured in the 0.6 < λ < 1.5 µm range. The photophysical processes leading to charge generation are investigated by performing a global analysis on transient absorption data of blended polymer:PC71BM films. In these blends, charge carriers form primarily at polymer aggregate sites on the ultrafast time scale (within our instrument response), leaving quickly decaying single-chain excitons unquenched. The results have important implications for the further development of organic infrared optoelectronic devices, where targeting processes such as excited state delocalization over aggregates may be necessary to mitigate losses to ultrafast exciton decay as materials with even lower band gaps are developed.

Donor-acceptor (DA) conjugated polymers provide an important platform for the development of solution-processed optoelectronic devices. The complex interrelation between electronic properties and conformational disorder in these materials complicates the identification of design guidelines to control the bandgap at low energies, limiting the design of new optoelectronic and device functionalities. Here, we demonstrate that DA polymers comprised of exocyclic olefin substituted cyclopentadithiophene donors, in combination with conventional electron acceptors, display very narrow optical bandgaps (1.2 > Eoptg > 0.7 eV) and primary photoexcitations extending into the shortwave infrared. Theoretical calculations reveal fundamental structure-property relationships toward bandgap and energy level control in these spectral regions. Bulk heterojunction photodiodes fabricated using these new materials demonstrate a detectivity (D∗) of > 1011 Jones within a spectral range of 0.6-1.43 μm and measurable D∗ to 1.8 μm, the longest reported to date for conjugated polymer based systems.