The pressure evolution of the magnetic properties of the Ce2RhIn7.79Cd0.21 heavy fermion compound was investigated by single crystal neutron magnetic diffraction and electrical resistivity experiments under applied pressure. From the neutron magnetic diffraction data, up to P = 0.6 GPa, we found no changes in the magnetic structure or in the ordering temperature TN = 4.8 K. However, the increase of pressure induces an interesting spin rotation of the ordered antiferromagnetic moment of Ce2RhIn7.79Cd0.21 into the ab tetragonal plane. From the electrical resistivity measurements under pressure, we have mapped the evolution of TN and the maximum of the temperature dependent electrical resistivity (TMAX) as a function of the pressure (P ≲ 3.6 GPa). To gain some insight into the microscopic origin of the observed spin rotation as a function of pressure, we have also analyzed some macroscopic magnetic susceptibility data at ambient pressure for pure and Cd-doped Ce2RhIn8 using a mean-field model including tetragonal crystalline electric field (CEF). The analysis indicates that these compounds have a Kramers doublet Γ7- -type ground state, followed by a Γ7+ first excited state at Δ1 ∼ 80 K and a Γ6 second excited state at Δ2 ∼ 270 K for Ce2RhIn8 and Δ2 ∼ 250 K for Ce2RhIn7.79Cd0.21. The evolution of the magnetic properties of Ce2RhIn8 as a function of Cd doping and the rotation of the direction of the ordered moment for the Ce2RhIn7.79Cd0.21 compound under pressure suggest important changes of the single ion anisotropy of Ce3+ induced by applying pressure and Cd doping in these systems. These changes are reflected in modifications in the CEF scheme that will ultimately affect the actual ground state of these compounds.

Low-temperature magnetic properties of Cd-doped Ce2 M In 8 (M=Rh and Ir) single crystals are investigated. Experiments of temperature-dependent magnetic-susceptibility, heat-capacity, and electrical-resistivity measurements revealed that Cd doping enhances the antiferromagnetic (AFM) ordering temperature from TN =2.8 K (x=0) to TN =4.8 K (x=0.21) for Ce2 RhIn8-x Cd x and induces long-range AFM ordering with TN =3.8 K (x=0.21) for Ce2 IrIn8-x Cdx. Additionally, x-ray and neutron magnetic scattering studies showed that Cd-doped samples present below TN a commensurate antiferromagnetic structure with a propagation vector ε→ = (1/2, 1/2, 0). The resolved magnetic structures for both compounds indicate that the Cd doping tends to rotate the direction of the ordered magnetic moments toward the ab plane. This result suggests that the Cd doping affects the Ce3+ ground-state single-ion anisotropy modifying the crystalline electrical field (CEF) parameters at the Ce3+ site. Indications of CEF evolution induced by Cd doping were also found in the electrical-resistivity measurements. Comparisons between our results and the general effects of Cd doping on the related compounds CeMIn 5 (M=Co, Rh, and Ir) confirms the claims that the Cd doping induced electronic tuning is the main effect favoring AFM ordering in these compounds. © 2010 The American Physical Society.