Using strain, i.e. subtle changes in lattice constant in a thin film induced by the underlying substrate, opens up intriguing new ways to control material properties. We present a study of the effects of strain on structural and ferromagnetic properties of (1 1 1)_pc-oriented La_0.7Sr_0.3MnO₃ epitaxial thin films grown on NdGaO₃, SrTiO₃, and DyScO₃ substrates. (The subscript pc denotes the pseudo-cubic symmetry.) The results show that La_0.7Sr_0.3MnO₃ assumes a monoclinic unit cell on NdGaO₃ and DyScO₃ and a rhombohedral unit cell on SrTiO₃. For La_0.7Sr_0.3MnO₃ on NdGaO₃ and DyScO₃ a uniaxial magnetic anisotropy is found, while La_0.7Sr_0.3MnO₃ on SrTiO₃ is magnetically isotropic. The Néel model is used to explain the anisotropy of the thin films on NdGaO₃ and SrTiO₃, however, for La_0.7Sr_0.3MnO₃ on DyScO₃ the effect of octahedral rotations needs to be included through the single ion model. Through examination of the Curie temperature of the strained films we suggest that (1 1 1)-strain has a different effect on the Jahn-Teller splitting of e _g and t _2g electron levels than what is seen in (0 0 1)_pc-oriented La_0.7Sr_0.3MnO₃ thin films.

Goldstone modes are massless particles resulting from spontaneous symmetry breaking. Although such modes are found in elementary particle physics as well as in condensed-matter systems like superfluid helium, superconductors, and magnons, structural Goldstone modes are rare. Epitaxial strain in thin films can induce structures and properties not accessible in bulk and has been intensively studied for (001)-oriented perovskite oxides. Here we predict Goldstone-like phonon modes in (111)-strained SrMnO3 by first-principles calculations. Under compressive strain the coupling between two in-plane rotational instabilities gives rise to a Mexican hat-shaped energy surface characteristic of a Goldstone mode. Conversely, large tensile strain induces in-plane polar instabilities with no directional preference, giving rise to a continuous polar ground state. Such phonon modes with U(1) symmetry could emulate structural condensed-matter Higgs modes. The mass of this Higgs boson, given by the shape of the Mexican hat energy surface, can be tuned by strain through proper choice of substrate.

When thin films are patterned to realize nanoscale device geometries, maintaining their structural integrity is key to the quality of their functional properties. The introduction of new surfaces and interfaces by lateral modifications may alter material properties as well as the expected device functionality. In this study, two different techniques for nanoscale patterning of epitaxial thin films of La0.7Sr0.3MnO3 are used to investigate the effects on their ferromagnetic properties and film crystalline structure. Nanomagnets are realized as free-standing structures and embedded ferromagnets in a paramagnetic matrix, respectively. We find that the magnetic dichroism signal in x-ray spectomicroscopy is stronger along the edges of the embedded magnets close to TC. X-ray-diffraction measurements reveal a reduction of their in-plane lattice parameters. We discuss how in-plane stress from the nanomagnet surroundings can affect the magnetic properties in these structures.

Using soft x-ray spectromicroscopy, we investigate the magnetic domain structure in embedded nanomagnets defined in La0.7Sr0.3MnO3 thin films and LaFeO3/La0.7Sr0.3MnO3 bilayers. We find that shape-controlled antiferromagnetic domain states give rise to a significant reduction of the switching field of the rectangular nanomagnets. This is discussed within the framework of competition between an intrinsic spin-flop coupling and shape anisotropy. The data demonstrates that shape effects in antiferromagnets may be used to control the magnetic properties in nanomagnets.

In antiferromagnetic spintronics control of the domains and corresponding spin axis orientation is crucial for devices. Here we investigate the antiferromagnetic axis in (111)-oriented LaFeO3/SrTiO3, which is coupled to structural twin domains. The structural domains have either the orthorhombic a- or b-axis along the in-plane 110 cubic directions of the substrate, and the corresponding magnetic domains have the antiferromagnetic axis in the sample plane. Six degenerate antiferromagnetic axes are found corresponding to the 110 and 112 in-plane directions. This is in contrast to the biaxial anisotropy in (001)-oriented films and reflects how crystal orientation can be used to control magnetic anisotropy in antiferromagnets.

We observe an induced switchable magnetic moment of 1.6±0.40μB/Fe for the nominally antiferromagnetic LaFeO3 extending two to four interface layers into the non-charge transfer system La0.7Sr0.3MnO3/LaFeO3/SrTiO3(111). Simultaneously a mismatch of oxygen octahedra rotations at the interface implies an atomic reconstruction of reduced symmetry at the interface, reaching two to five layers into LaFeO3. Density functional theory of a structure with atomic reconstruction and different correlation strength shows a ferrimagnetic state with a net Fe moment at the interface. Together these results suggest that engineered oxygen octahedra rotations, affecting the local symmetry, affect electron correlations and can be used to promote magnetic properties.

The interconversion of charge and spin currents via spin-Hall effect is essential for spintronics. Energy-efficient and deterministic switching of magnetization can be achieved when spin polarizations of these spin currents are collinear with the magnetization. However, symmetry conditions generally restrict spin polarizations to be orthogonal to both the charge and spin flows. Spin polarizations can deviate from such direction in nonmagnetic materials only when the crystalline symmetry is reduced. Here, we show control of the spin polarization direction by using a non-collinear antiferromagnet Mn₃GaN, in which the triangular spin structure creates a low magnetic symmetry while maintaining a high crystalline symmetry. We demonstrate that epitaxial Mn₃GaN/permalloy heterostructures can generate unconventional spin-orbit torques at room temperature corresponding to out-of-plane and Dresselhaus-like spin polarizations which are forbidden in any sample with two-fold rotational symmetry. Our results demonstrate an approach based on spin-structure design for controlling spin-orbit torque, enabling high-efficient antiferromagnetic spintronics.

The control of the in-plane domain evolution in ferroelectric thin films is not only critical to understanding ferroelectric phenomena but also to enabling functional device fabrication. However, in-plane polarized ferroelectric thin films typically exhibit complicated multi-domain states, not desirable for optoelectronic device performance. Here we report a strategy combining interfacial symmetry engineering and anisotropic strain to design single-domain, in-plane polarized ferroelectric BaTiO₃ thin films. Theoretical calculations predict the key role of the BaTiO₃/PrScO₃ [Formula: see text] substrate interfacial environment, where anisotropic strain, monoclinic distortions, and interfacial electrostatic potential stabilize a single-variant spontaneous polarization. A combination of scanning transmission electron microscopy, piezoresponse force microscopy, ferroelectric hysteresis loop measurements, and second harmonic generation measurements directly reveals the stabilization of the in-plane quasi-single-domain polarization state. This work offers design principles for engineering in-plane domains of ferroelectric oxide thin films, which is a prerequisite for high performance optoelectronic devices.