Electrical resistivity ρ(T) and thermal expansion Δl/l were measured for the intermediate valence compound (IVC) YbCu2Si2 and its counterpart LuCu2Si2 between 4.2 K and 300 K. It was found that the thermal expansion coefficient α(T) has a negative minimum around 31 K (=Tmin) at atmospheric pressure and Tmin decreases with increasing pressure at the rate δTmin/δT = -0.45 K/kbar. © 1993.

The linear thermal expansion of polycrystalline CeRhSb has been measured in the temperature range 77 K < T < 300 K under hydrostatic pressure up to 2.3 GPa. It is found that the thermal expansion coefficient α(T) at ambient pressure shows a maximum around Tmax = 140 K and Tmax increases with increasing pressure having rate of ∂Tmax/∂P = + 38.5 K/GPa. This fact shows that the Kondo temperature TK is increased by applying pressure.

Measurements of the temperature-dependent specific heat and thermal expansion coefficient near a T=0 magnetic-nonmagnetic boundary, accessed in CeRh2Si2 by application of pressure and in CeRh2-xRuxSi2 at ambient pressure by chemical substitution, emphasize the role of disorder in producing non-Fermi-liquid behavior. Interestingly, superconductivity also develops near this boundary in some crystallographically-ordered Ce-based heavy-fermion compounds. [CeRh2-xRuxSi2, specific heat, thermal expansion, susceptibility, non-Fermi-liquid]. © 1998, The Japan Society of High Pressure Science and Technology. All rights reserved.

Measurement of the magnetization up to H = 30 T at 4.2 K, temperature dependence of magnetic susceptibility and effect of pressure on the electrical resistivity on CeScGe are presented. These results indicate that CeScGe is antiferromagnetic with TN = 46 K. The Néel temperature TN decreases with increasing pressure with the rate of dTN/dP= -0.56K/kbar.