The ultrafast photodissociation dynamics of gas phase CH3Br molecules in the red wing of the A-band, i.e. the first molecular adsorption continuum, is investigated by pump-probe spectroscopy. The experiment employs femtosecond laser pulses at 266 nm in the ultraviolet to dissociate the molecule and high order harmonic extreme ultraviolet pulses in conjunction with time-of-flight mass spectrometry to ionize and detect the fragments. A dissociation time of 116 ± 25 fs is obtained from the pump-probe risetime of the Br+ ion signal, which originates from formation of either or both Br(2P3/2) or Br(2P1/2). The timescale is in a good agreement with the previously calculated A-band dissociation time of CH3Br using the anisotropy parameter β deduced from angular photodissociation experiments. Based on classical molecular dynamics simulations and previous spectroscopic information, the most likely pathway is dissociation of the CH3Br molecule via the 3Q0 state of the A-band, which correlates with the formation of the spin-orbit excited bromine fragment.

Wide band gap heterostructures can be accurately fabricated at room temperature to exhibit remarkable electrical properties that facilitate the transfer of electrons across the heterojunction while blocking the transfer of holes. The present investigation focuses on engineering the electronic structure of a TiO2 overlayer on a p-type doped Si(100) substrate by controlling the concentration of TiO2 oxygen vacancies. TiO2 films are deposited on p-Si(100) in an ultrahigh vacuum setup by evaporation of Ti atoms at a constant rate in a variable O2 atmosphere. The concentration of oxygen vacancies and consequently the degree of n-type doping of TiO2 is tuned by controlling the oxygen background pressure during the TiO2 formation. To investigate the electronic structure and the concentration of defects in the TiO2 layer as well as to characterize the TiO2/p-Si(100) band alignment we used photoelectron spectroscopy employing femtosecond extreme ultraviolet laser pulses produced via high harmonic generation. Furthermore, using a pump-probe technique in conjunction with photoemission spectroscopy, an ultrafast electron injection from the p-Si(100) substrate into the defect-rich TiO2 layer is observed with a time constant of 450 fs, as well as the subsequent charge carrier recombination. The latter is revealed to be affected by the oxygen defects when investigated with femtosecond resolution. No charge transfer is observed when defect-poor TiO2 films are prepared on the p-Si(100) substrate. This might be attributed to a change in the energy band alignment at the TiO2/Si(100) interface that reduces the built-in potential across the heterojunction and consequently reduces the driving force responsible for the injection of electrons into the TiO2 layer.

Understanding the electronic structure and charge carrier dynamics of supported clusters is important due to their many potential applications in photochemistry and catalysis. In this investigation, photoemission spectroscopy, in conjunction with femtosecond extreme ultraviolet (XUV) laser pulses, is used to investigate the electronic structure and ultrafast charge carrier dynamics at a Si(100) surface decorated with Zn clusters. Static photoemission spectroscopy is used to investigate the changes in the electronic structure as the dimensionality of the Zn is increased from small clusters composed of a very few atoms to metallic Zn particles. Furthermore, femtosecond optical-pump XUV-probe photoemission spectroscopy is employed to induce a charge transfer from the p-Si(100) substrate to the Zn clusters and to measure in real time the charge trapping at the Zn cluster as well as the subsequent charge relaxation. The ultrafast charge carrier dynamics are also investigated for small clusters and metallic Zn particles. Significant transient charging of the Zn clusters after excitation of the Si(100) substrate by 800 nm light is observed for Zn coverages greater than 0.12 ML Zn, which coincides with the formation of a Schottky barrier at the interface between the Zn particle and the p-Si(100) substrate. The transient signals show that the charge trapping time at the Zn cluster varies with the cluster size, which is rationalized based on the electronic structure of the cluster as well as the band energy alignment at the Zn cluster-Si(100) junction.

Femtosecond XUV photoemission spectroscopy is employed to monitor the non-metal to metal transition of Zn clusters grown on p-Si(100) as well as the ultrafast charge migration, trapping, and recombination at the surface.

A metal-semiconductor heterojunction is investigated by Auger and photoelectron spectroscopy to characterize the structural and electronic properties of the metallic film and to obtain the time-resolved electronic response induced by femtosecond laser excitation of the semiconductor material. The 3.5 monolayer (ML) Zn films deposited on p-type Si(100) at liquid nitrogen temperature grows in a layer-by-layer fashion. Electronic structure measurements by extreme ultraviolet (XUV) photoelectron spectroscopy indicate that the films are metallic in nature, creating a Schottky barrier at the 3.5 ML Zn/p-Si(100) interface. Utilizing a 35 fs, 800 nm pump pulse at a pump intensity of (2.5-6) × 109 W/cm2 to excite the Si and a time-delayed extreme ultraviolet pulse to probe the Zn, we observed large transient surface photovoltage shifts of 0.3-2.2 eV at carrier densities of (1.5-4.5) × 1020 cm-3. Three shifts are determined the Zn 3d core level, the photoemission onset, and the metallic Fermi level. The photovoltages increase with laser excitation intensity, and the Zn 3d core level exhibits the largest binding energy shifts due to pronounced screening of the core level. The large observed shifts are rationalized on the basis of the energetics of band flattening and carrier accumulation in the metallic layer of the Zn/p-Si(100) heterojunction at high carrier densities. The observed carrier recombination dynamics are biexponential in character, with similar time constants for both the Zn 3d and photoemission onset binding energy shifts. The Zn 3d core level shifts are also found to be sensitive to the electron temperature. These results show that core-level photoemission can be used to monitor valence electron dynamics, allowing separation of charge dynamics in heterojunctions and solids composed of multiple elements.

The detection of intermediate species and the correlation of their ultrafast dynamics with the morphology and electronic structure of a surface is crucial to fully understand and control heterogeneous photoinduced and photocatalytic reactions. In this work, the ultrafast photodissociation dynamics of CH₃Br molecules adsorbed on variable-size Au clusters on MgO/Mo(100) is investigated by monitoring the CH₃⁺ transient evolution using a pump-probe technique in conjunction with surface mass spectrometry. Furthermore, extreme-UV photoemission spectroscopy in combination with theoretical calculations is employed to study the electronic structure of the Au clusters on MgO/Mo(100). Changes in the ultrafast dynamics of the CH₃⁺ fragment are correlated with the electronic structure of Au as it evolves from monomers to small nonmetallic clusters to larger nanoparticles with a metallic character. This work provides a new avenue to a detailed understanding of how surface-photoinduced chemical reactions are influenced by the composition and electronic structure of the surface.

Metal oxide semiconductor junctions are central to most electronic and optoelectronic devices, but ultrafast measurements of carrier transport have been limited to device-average measurements. Here, charge transport and recombination kinetics in each layer of a Ni-TiO₂-Si junction is measured using the element specificity of broadband extreme ultraviolet (XUV) ultrafast pulses. After silicon photoexcitation, holes are inferred to transport from Si to Ni ballistically in ~100 fs, resulting in characteristic spectral shifts in the XUV edges. Meanwhile, the electrons remain on Si. After picoseconds, the transient hole population on Ni is observed to back-diffuse through the TiO₂, shifting the Ti spectrum to a higher oxidation state, followed by electron-hole recombination at the Si-TiO₂ interface and in the Si bulk. Electrical properties, such as the hole diffusion constant in TiO₂ and the initial hole mobility in Si, are fit from these transient spectra and match well with values reported previously.