Two-dimensional materials, especially transaction metal dichalcogenides, have shown a wide variety of applications and variability of desirable electronic characteristics. Various methods have been demonstrated to deposit pristine monolayer flakes. Traditional chemical vapor deposition at atmospheric and high-vacuum pressure growth of TMDs had been demonstrated. Rhenium disulfide (ReS2), a novel TMD, is grown via chemical vapor deposition and tested a variety of methods concluding with results and challenges to come.

In this work, TMD thin films have proven to play a key role in advancing performance and high-power devices. Vertical devices based on 2D semiconductor heterostructures demonstrate the potential for high speed and large power performance. Taking advantage of mainstream 3D materials such as GaN and novel 2D materials such as transition metal dichalcogenides to fabricate this structure. The path to a functionable 3-terminal heterojunction bipolar transistor (HBT) has been revealed showing that clean, sharp interfaces play a major role in the electrical performance of proposed devices.