A spontaneous ferromagnetic moment can be induced in Bi$_{2}$Te$_{3}$ thin
films below a temperature T $\approx$ 16 K by the introduction of Mn dopants.
We demonstrate that films grown via molecular beam epitaxy with the
stoichiometry Mn$_{0.14}$Bi$_{1.86}$Te$_3$ maintain the crystal structure of
pure Bi$_{2}$Te$_{3}$. The van der Waals nature of inter-layer forces in the
Mn$_{0.14}$Bi$_{1.86}$Te$_3$ crystal causes lattice mismatch with the
underlayer to have a limited effect on the resulting crystal structure, as we
demonstrate by thin film growth on tetragonal MgF$_{2}$ (110) and NiF$_{2}$
(110). Electronic transport and magnetic moment measurements show that the
ferromagnetic moment of the Mn$_{0.14}$Bi$_{1.86}$Te$_3$ thin films is enhanced
as the Fermi level moves from the bulk conduction band and towards the bulk
band gap, suggesting that electronic surface states play an important role in
mediating the ferromagnetic order. Ferromagnetic
Mn$_{0.14}$Bi$_{1.86}$Te$_3$/antiferromagnetic NiF$_{2}$ bilayers show evidence
that the ferromagnetic moment of the Mn$_{0.14}$Bi$_{1.86}$Te$_3$ film is
suppressed, suggesting the existence of an interface effect between the two
magnetic layers.