A sperm that fertilizes an egg has successfully survived multiple checkpoints within the female reproductive tract, termed pre-fertilization events. The leukocytic response is a pre-fertilization event in which sperm trigger an immune response that promotes homing of circulating leukocytes to the uterine lumen to destroy most sperm. Various glycoconjugates decorate the sperm surface, including sialic acids, which are abundant at the sperm surface where they cap most glycan chains and regulate sperm migration through cervical mucus, formation of the sperm oviductal reservoir, and sperm capacitation. However, the role of sperm-associated sialic acids in the leukocytic reaction remains unknown. The cognate endogenous binding partners of sialic acids, sialic acid-binding immunoglobulin-like lectins (Siglecs) play a pivotal role in regulating many immune responses. Here we investigated whether sperm-associated sialic acids inhibit activation of neutrophils, one of the major immune cells involved in the leukocytic reaction. We used in vitro interactions between sperm and neutrophils as well as binding assays between sperm and recombinant Siglec-Fc chimeric proteins to measure interactions. Moreover, we examined whether Siglecs are expressed on human and mouse endometria, which have a role in initiating the leukocytic reaction. Surprisingly less sialylated, capacitated, sperm did not increase neutrophil activation in vitro However, we observed expression of several Siglecs on the endometrium and that these receptors interact with sialylated sperm. Our results indicate that sperm sialic acids may interact with endometrial Siglecs and that these interactions facilitate sperm survival in the face of female immunity.

Crystallography is a major technique for determining large RNA structures. Obtaining diffraction-quality crystals has been the bottleneck. Although several RNA crystallization methods have been developed, the field strongly needs additional approaches. Here we invented an in crystallo selection strategy for identifying mutations that enhance a target RNA's crystallizability. The strategy includes constructing an RNA pool containing random mutations, obtaining crystals, and amplifying the sequences enriched by crystallization. We demonstrated a proof-of-principle application to the P4-P6 domain from the Tetrahymena ribozyme. We further determined the structures of four selected mutants. All four establish new crystal lattice contacts while maintaining the native structure. Three mutants achieve this by relocating bulges and one by making a helix more flexible. In crystallo selection provides opportunities to improve crystals of RNAs or RNA-ligand complexes. Our results also suggest that mutants may be rationally designed for crystallization by "walking" a bulge along the RNA chain.

Scanning probe lithography is used to directly pattern monolayer transition metal dichalcogenides (TMDs) without the use of a sacrificial resist. Using an atomic-force microscope, a negatively biased tip is brought close to the TMD surface. By inducing a water bridge between the tip and the TMD surface, controllable oxidation is achieved at the sub-100 nm resolution. The oxidized flake is then submerged into water for selective oxide removal which leads to controllable patterning. In addition, by changing the oxidation time, thickness tunable patterning of multilayer TMDs is demonstrated. This resist-less process results in exposed edges, overcoming a barrier in traditional resist-based lithography and dry etch where polymeric byproduct layers are often formed at the edges. By patterning monolayers into geometric patterns of different dimensions and measuring the effective carrier lifetime, the non-radiative recombination velocity due to edge defects is extracted. Using this patterning technique, it is shown that selenide TMDs exhibit lower edge recombination velocity as compared to sulfide TMDs. The utility of scanning probe lithography towards understanding material-dependent edge recombination losses without significantly normalizing edge behaviors due to heavy defect generation, while allowing for eventual exploration of edge passivation schemes is highlighted, which is of profound interest for nanoscale electronics and optoelectronics.