p-Type transparent conducting materials (p-TCMs) are important components of optoelectronic devices including solar cells, photodetectors, displays, and flexible sensors. Cu-Zn-S thin films prepared by chemical bath deposition (CBD) can have both high transparency in the visible range (>80%) as well as excellent hole conductivity (>1000 S cm-1). However, the interplay between the deposition parameters in the CBD process (metal and sulfur precursor concentrations, temperature, pH, complexing agents, etc.) creates a multidimensional parameter space such that optimization for a specific application is challenging and time-consuming. Here we show that strategic design of experiment combined with machine learning (ML) allows for the efficient optimization of p-TCM performance. The approach is guided by a figure of merit (FOM) calculated from the film conductivity and optical transmission in the desired spectral range. A specific example is shown using two steps of optimization using a selected subset of four experimental CBD factors. The ML model is based on support vector regression employing a radial basis function as the kernel function. 10-fold cross-validation was performed to mitigate overfitting. After the first round of optimization, predicted areas in the parameter space with maximal FOMs were selected for a second round of optimization. Films with optimal FOMs were incorporated into heterojunction solar cells and transparent photodiodes. The optimization approach shown here will be generally applicable to any materials synthesis process with multiple parameters.

P-Type transparent conducting Cu alloyed ZnS thin films from CuZnS targets (, 0.2, 0.3, 0.4, and 0.5) were deposited on glass substrates via radio frequency sputtering. X-ray diffraction and TEM-SAED analysis show that all the films have sphalerite ZnS as the majority crystalline phase. In addition, films with 30% and 40% Cu show the presence of increasing amounts of crystalline Cu2S phase. Conductivity values 400 S were obtained for the films having 30% and 40% Cu, with the maximum conductivity of 752 S obtained for the film with 40% Cu. Temperature dependent electrical transport measurements indicate metallic as well as degenerate hole conductivity in the deposited films. The reflection-corrected transmittance of this Cu alloyed ZnS (40% Cu) film was determined to be 75% at 550 nm. The transparent conductor figure of merit () of the Cu alloyed ZnS (40% Cu), calculated with the average value of transmittance between 1.5 to 2.5 eV, was ≈276 .

All transparent conducting materials (TCMs) of technological practicality are n-type; the inferior conductivity of p-type TCMs has limited their adoption. In addition, many relatively high-performing p-type TCMs require synthesis temperatures >400 °C. Here, room-temperature pulsed laser deposition of copper-alloyed zinc sulfide (CuxZn1-xS) thin films (0 ≤ x ≤ 0.75) is reported. For 0.09 ≤ x ≤ 0.35, CuxZn1-xS has high p-type conductivity, up to 42 S cm−1 at x = 0.30, with an optical band gap tunable from ≈3.0–3.3 eV and transparency, averaged over the visible, of 50%–71% for 200–250 nm thick films. In this range, synchrotron X-ray and electron diffraction reveal a nanocrystalline ZnS structure. Secondary crystalline CuyS phases are not observed, and at higher Cu concentrations, x > 0.45, films are amorphous and poorly conducting. Within the TCM regime, the conductivity is temperature independent, indicating degenerate hole conduction. A decrease in lattice parameter with Cu content suggests that the hole conduction is due to substitutional incorporation of Cu onto Zn sites. This hole-conducting phase is embedded in a less conducting amorphous CuyS, which dominates at higher Cu concentrations. The combination of high hole conductivity and optical transparency for the peak conductivity CuxZn1-xS films is among the best reported to date for a room temperature deposited p-type TCM.

Transparent diodes formed by a heterojunction between p-type CuS–ZnS and n-type ZnO thin films were fabricated by sequential chemical bath deposition and sol-gel spin coating. The diodes are transparent in the visible (≈70% at 550 nm) and exhibit a good rectifying characteristics, with If/Ir ratios of up to 800 at ±1 V, higher than most of the reported solution-processed diodes measured at a similar bias. More importantly, when operated as a self-powered (zero bias) UV photodetector, they show stable and fast (<1 s) photoresponse with a maximum responsivity of 12 mA W−1 at 300 nm. Both the response time and responsivity of the p-CuZnS/n-ZnO UV photodiode are comparable or superior to similar solution-processed devices reported in the literature.

P-type transparent conducting films of nanocrystalline (CuS)x:(ZnS)1-x were synthesized by facile and low-cost chemical bath deposition. Wide angle X-ray scattering (WAXS) and high resolution transmission electron microscopy (HRTEM) were used to evaluate the nanocomposite structure, which consists of sub-5 nm crystallites of sphalerite ZnS and covellite CuS. Film transparency can be controlled by tuning the size of the nanocrystallites, which is achieved by adjusting the concentration of the complexing agent during growth; optimal films have optical transmission above 70% in the visible range of the spectrum. The hole conductivity increases with the fraction of the covellite phase and can be as high as 1000 S cm(-1), which is higher than most reported p-type transparent materials and approaches that of n-type transparent materials such as indium tin oxide (ITO) and aluminum doped zinc oxide (AZO) synthesized at a similar temperature. Heterojunction p-(CuS)x:(ZnS)1-x/n-Si solar cells were fabricated with the nanocomposite film serving as a hole-selective contact. Under 1 sun illumination, an open circuit voltage of 535 mV was observed. This value compares favorably to other emerging heterojunction Si solar cells which use a low temperature process to fabricate the contact, such as single-walled carbon nanotube/Si (370-530 mV) and graphene/Si (360-552 mV).