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Open Access Publications from the University of California

Scholarly Works (2 results)

  • Thesis
  • Peer Reviewed
UC Berkeley Electronic Theses and Dissertations (2014)

In the last couple decades, the phenomenal growth of mobile electronics is fueling the

demand for multi-functional, high performance and ultra-low power integrated circuits.

Reduction in Vdd to achieve orders of magnitude reduction of energy consumption is crucial if the promise of many more decades of growth of electronics usage is to be realized. For MOSFETs, Vdd reduction can only be achieved at the expense of speed loss and/or off-state leakage increase because the subthreshold slope is fundamentally limited to 60mV/decade. New transistors with sub-60mV/dec swing allowing Vdd scaling to 0.3V and below are therefore highly desirable.

In this research, two approaches to achieve transistors with sub-60mV/dec swing are

explored. Feedback FET (FBFET) uses positive feedback to induce an abrupt change in current with a small change in the gate voltage. Experimental results show FBFET can achieve less than 2mV/dec swing, with Ion/Ioff ratio larger than six-orders-of-magnitude. Simulation is used to illustrate the operating principle, and to evaluate the potential of FBFET. Another approach is to integrate negative capacitance element onto the gate stack of MOSFETs. The negative capacitance does not change the transport physics, but rather seeks to "amplify" the gate voltage electrostatically to achieve less than 60mV/dec swing. Design considerations and optimizations of Negative Capacitance FET (NCFET) are explored using simulations. Simulation shows the possibility of achieving hysteresis free, sub-30mV/dec operation of NCFET based on an UTBSOI design. The experimental NCFET result of epitaxial ferroelectric thin film on SOI substrate is presented.

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Cover page: Steep On/Off Transistors for Future Low Power Electronics
  • Article
  • Peer Reviewed
UC Berkeley Previously Published Works (2016)
Single-crystalline thin films of complex oxides show a rich variety of functional properties such as ferroelectricity, piezoelectricity, ferro and antiferromagnetism and so on that have the potential for completely new electronic applications. Direct synthesis of such oxides on silicon remains challenging because of the fundamental crystal chemistry and mechanical incompatibility of dissimilar interfaces. Here we report integration of thin (down to one unit cell) single crystalline, complex oxide films onto silicon substrates, by epitaxial transfer at room temperature. In a field-effect transistor using a transferred lead zirconate titanate layer as the gate insulator, we demonstrate direct reversible control of the semiconductor channel charge with polarization state. These results represent the realization of long pursued but yet to be demonstrated single-crystal functional oxides on-demand on silicon.
    Cover page: Single crystal functional oxides on silicon
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