THE EFFECTS OF INTERFACE REACTIONS ON ELECTRICAL CHARACTERISTICS OF METAL-GaAs CONTACTS

HEAVY ION RUTHERFORD BACKSCATTERING SPECTROMETRY (HIRBS) FOR 1SEAR SURFACE CHARACTERIZATION OF ELECTRONIC MATERIALS

SCHOTTKY BARRIER DEGRADATION OF THE W/GaAs SYSTEM AFTER HIGH TEMPERATURE ANNEALING

ION BEAM CHARACTERIZATION OF THIN FILM METAL/GaAs INTERFACE REACTIONS

INTERFACIAL INTERACTIONS OF EVAPORATED IRIDIUM THIN FILMS WITH (100) GaAs

CORRELATION BETWEEN SOLID STATE REACTION AND ELECTRICAL PROPERTIES OF THE Rh/GaAs SCHOTTKY CONTACT

OXIDATIVE ADDITION OF C-H BONDS IN ORGANIC MOLECULES TO TRANSITION METAL CENTRS

SOLID PHASE REACTIONS BETWEEN (100) GaAs AND THIN FILM REFRACTORY METALS (Ti, Zr, V, Nb, Cr, Mo AND W)

HIGH TEMPERATURE ANNEALING CHARACTERISTICS OF TUNGSTEN AND TUNGSTEN NITRIDE SCHOTTKY CONTACTS TO GAAS UNDER DIFFERENT ANNEALING CONDITIONS

APPLICATIONS OF HEAVY-ION RUTHERFORD BACKSCATTERING SPECTROMETRY (HIRBS) TO THE ANALYSIS OF CONTACT STRUCTURES ON GaAs AND Ge