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In situ measurement of fatigue-crack growth rates in a silicon carbide ceramic at elevated temperatures using a D.C. potential system

  • Author(s): Ritchie, R.O.
  • et al.
Abstract

The understanding of the mechanisms of fatigue-crack propagation in advanced ceramcis at elevated temperatures (>800 degreesC) has in part been hampered by the experimental difficulty in directly measuring crack lengths, and hence crack-growth rates, at such high temperatures.

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