UCLA

We demonstrated a prototype Gated Lateral power bipolar junction transistor (GLP-BJT) on wide bandgap semiconductor. The device combined the intrinsic advantages of high current gain of a Gated Lateral-BJT and good current handling and voltage blocking capabilities of GaN material. As a result, the common-emitter current gain remained over 300 at a high collector current density of 2 kA/cm2 despite a wide p-base region of 2µm. The open base breakdown voltage BVCEO was over 300 V corresponding to a high critical field of 2.5 MV/cm. These figures of merit show great promise of GaN-based GLP-BJT in power applications and also shed light on the development of state-of-the-art bipolar transistors based on other wide bandgap semiconductors.