Spatially resolved characterization of electromigration-induced plastic deformation in al (0.5wt percent cu) interconnect
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Spatially resolved characterization of electromigration-induced plastic deformation in al (0.5wt percent cu) interconnect

  • Author(s): Barabash, R.I.
  • Ice, G.E.
  • Tamura, N.
  • Patel, J.R.
  • Valek, B.C.
  • Bravman, J.C.
  • Spolenak, R.
  • et al.
Abstract

Electromigration during accelerated testing can induce large scale plastic deformation in Al interconnect lines as recently revealed by the white beam scanning X-ray microdiffraction. In the present paper, we provide a first quantitative analysis of the dislocation structure generated in individual micron-sized Al grains during an in-situ electromigration experiment. Laue reflections from individual interconnect grains show pronounced streaking after electric current flow. We demonstrate that the evolution of the dislocation structure during electromigration is highly inhomogeneous and results in the formation of unpaired randomly distributed dislocations as well as geometrically necessary dislocation boundaries. Approximately half of all unpaired dislocations are grouped within the walls. The misorientation created by each boundary and density of unpaired individual dislocations is determined.

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