Single gate p-n junctions in graphene-ferroelectric devices
- Author(s): Hinnefeld, JH
- Xu, R
- Rogers, S
- Pandya, S
- Shim, M
- Martin, LW
- Mason, N
- et al.
Published Web Locationhttps://doi.org/10.1063/1.4950975
© 2016 Author(s). Graphene's linear dispersion relation and the attendant implications for bipolar electronics applications have motivated a range of experimental efforts aimed at producing p-n junctions in graphene. Here we report electrical transport measurements of graphene p-n junctions formed via simple modifications to a PbZr0.2Ti0.8O3substrate, combined with a self-assembled layer of ambient environmental dopants. We show that the substrate configuration controls the local doping region, and that the p-n junction behavior can be controlled with a single gate. Finally, we show that the ferroelectric substrate induces a hysteresis in the environmental doping which can be utilized to activate and deactivate the doping, yielding an "on-demand" p-n junction in graphene controlled by a single, universal backgate.
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