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Single gate p-n junctions in graphene-ferroelectric devices

  • Author(s): Hinnefeld, JH
  • Xu, R
  • Rogers, S
  • Pandya, S
  • Shim, M
  • Martin, LW
  • Mason, N
  • et al.

Published Web Location

https://doi.org/10.1063/1.4950975
Abstract

© 2016 Author(s). Graphene's linear dispersion relation and the attendant implications for bipolar electronics applications have motivated a range of experimental efforts aimed at producing p-n junctions in graphene. Here we report electrical transport measurements of graphene p-n junctions formed via simple modifications to a PbZr0.2Ti0.8O3substrate, combined with a self-assembled layer of ambient environmental dopants. We show that the substrate configuration controls the local doping region, and that the p-n junction behavior can be controlled with a single gate. Finally, we show that the ferroelectric substrate induces a hysteresis in the environmental doping which can be utilized to activate and deactivate the doping, yielding an "on-demand" p-n junction in graphene controlled by a single, universal backgate.

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