UC Santa Barbara

We report a novel laser architecture, the hybrid silicon evanescent laser (SEL), that utilizes offset AlGaInAs quantum wells (QWs) bonded to a silicon waveguide. The silicon waveguide is fabricated on a silicon-on-insulator wafer using a complimentary metal-oxide-semiconductor-compatible process, and is subsequently bonded with the AlGaInAs QW structure using low temperature 02 plasma-assisted wafer bonding. The optical mode in the SEL is predominantly confined in the passive silicon waveguide and evanescently couples into the III-V active region providing optical gain. The SEL lases continuous wave (CW) at 1568 nm with a threshold of 23 mW. The maximum temperature for CW operation is 60 degrees C. The maximum single-sided fiber-coupled CW output power at room temperature is 4.5 mW.