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Anisotropic electronic and thermal transport properties of lightly oxygen-doped La2CuO4+δ

  • Author(s): Hundley, MF;
  • Kwok, RS;
  • Cheong, SW;
  • Thompson, JD;
  • Fisk, Z
  • et al.
Abstract

We track the systematic variation in magnetic susceptibility (χ), thermal conductivity (κ), anisotropic resistivity (ρ{variant}), and thermoelectric power (S) of crystalline La2CuO4+δ as a function of light hole doping. The level of hole doping (δ) was carefully varied by anneals under controlled oxygen-partial-pressure performed in such a way that the antiferromagnetic ordering temperature TN ranged from 250 to 310 K. χ data indicate that increased oxygen hole doping acts to reduce TN below the δ = 0 value of 320 K. Anomalies are present in κ at Tn that result from Cu spin fluctuations about the magnetically ordered ground state. Anomalies are also present in ρ{variant} and S that occur at TN for air-annealed samples wherein TN = 250 K; when more lightly hole-doped so that TN >250 K, the anomalies in ρ{variant} and S do not occur at TN, but instead occur at T<250 K. In analogy with heavily oxygen-loaded La2CuO4+δ, these transport anomalies may result from phase separation involving the diffusion of non-stoichiometric, excess oxygen. © 1991.

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