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Electronic Raman Scattering by Superconducting-Gap Excitations in Nb3Sn and V3Si
Abstract
Raman-scattering measurements on Nb3Sn and V3Si show new peaks in the superconducting state close in energy to the superconducting gap 2". These are attributed to direct electronic Raman scattering by pairs of superconducting quasiparticles. A theory is presented which fits the data well and provides evidence for anisotropy of the gap (20% in Nb3Sn) and of the matrix element for electronic Raman scattering. © 1983 The American Physical Society.
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