Effects of doping on hybridization gapped materials
Abstract
Doping studies are presented on three materials exhibiting hybridization gaps: Ce3Bi4Pt3, U3Sb4Pt3 and CeRhSb. In the case of trivalent La, Y, or Lu substituting for Ce or U, there is a suppression of the low temperature gap and an increase in the electronic specific heat, γ. In the case of tetravalent Th substitutions for U there is no change in γ and in the case of tetravalent Zr substitution for Ce in CeRhSb, there is an enhanced semiconductor-like behavior in the electrical resistance. These results are discussed in the light of a simple model of hybridization gapped systems. © 1992.
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