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Impact of substrate temperature on the incorporation of carbon-related defects and mechanism for semi-insulating behavior in GaN grown by molecular beam epitaxy

  • Author(s): Armstrong, A
  • Poblenz, C
  • Green, D S
  • Mishra, U K
  • Speck, J S
  • Ringel, S A
  • et al.
Abstract

The electrical conductivity and deep level spectrum of GaN grown by molecular beam epitaxy and codoped with carbon and silicon were investigated for substrate temperatures T-s of 650 and 720 degrees C as a function relative carbon and silicon doping levels. With sufficiently high carbon doping, semi-insulating behavior was observed for films grown at both temperatures, and growth at T-s=720 degrees C enhanced the carbon compensation ratio. Similar carbon-related band gap states were observed via deep level optical spectroscopy for films grown at both substrate temperatures. Due to the semi-insulating nature of the films, a lighted capacitance-voltage technique was required to determine individual deep level concentrations. Carbon-related band gap states underwent substantial redistribution between deep level and shallow acceptor configurations with change in T-s. In light of a T-s dependence for the preferential site of carbon incorporation, a model of semi-insulating behavior in terms of carbon impurity state incorporation mediated by substrate temperature is proposed. (c) 2006 American Institute of Physics.

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