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Three-dimensional crossbar arrays of self-rectifying Si/SiO2/Si memristors.

  • Author(s): Li, Can
  • Han, Lili
  • Jiang, Hao
  • Jang, Moon-Hyung
  • Lin, Peng
  • Wu, Qing
  • Barnell, Mark
  • Yang, J Joshua
  • Xin, Huolin L
  • Xia, Qiangfei
  • et al.
Abstract

Memristors are promising building blocks for the next-generation memory and neuromorphic computing systems. Most memristors use materials that are incompatible with the silicon dominant complementary metal-oxide-semiconductor technology, and require external selectors in order for large memristor arrays to function properly. Here we demonstrate a fully foundry-compatible, all-silicon-based and self-rectifying memristor that negates the need for external selectors in large arrays. With a p-Si/SiO2/n-Si structure, our memristor exhibits repeatable unipolar resistance switching behaviour (105 rectifying ratio, 104 ON/OFF) and excellent retention at 300 °C. We further build three-dimensinal crossbar arrays (up to five layers of 100 nm memristors) using fluid-supported silicon membranes, and experimentally confirm the successful suppression of both intra- and inter-layer sneak path currents through the built-in diodes. The current work opens up opportunities for low-cost mass production of three-dimensional memristor arrays on large silicon and flexible substrates without increasing circuit complexity.

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