We investigate the temporal stability of YBa2Cu3O7 Josephson junctions created by ion irradiation through a nano-scale implant mask fabricated using electron beam lithography and reactive ion etching. A comparison of current-voltage characteristics measured for junctions after fabrication and eight years of storage at room temperature show a slight decrease in critical current and increase in normal state resistance consistent with broadening of the weaklink from diffusion of defects. Shapiro step measurements performed 8 years after fabrication reveal that device uniformity is maintained and is strong evidence that these devices have excellent temporal stability for applications.
