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Reliability of InAs/GaAs quantum dot lasers epitaxially grown on silicon

  • Author(s): Liu, AY
  • Herrick, RW
  • Ueda, O
  • Petroff, PM
  • Gossard, AC
  • Bowers, JE
  • et al.
Abstract

© 1995-2012 IEEE. We present the first reliability study of InAs/GaAs self-assembled quantum dot lasers epitaxially grown on Ge/Si substrates. Some devices maintain lasing oscillation after more than 2700 h of constant current stress at 30 °C, longer than any previous life tests of GaAs lasers epitaxially grown on silicon. No catastrophic failures were observed. The lasers were characterized to gain insight on the aging mechanism.

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