UC Santa Barbara
Reliability of InAs/GaAs quantum dot lasers epitaxially grown on silicon
- Author(s): Liu, AY
- Herrick, RW
- Ueda, O
- Petroff, PM
- Gossard, AC
- Bowers, JE
- et al.
Published Web Locationhttps://doi.org/10.1109/JSTQE.2015.2418226
© 1995-2012 IEEE. We present the first reliability study of InAs/GaAs self-assembled quantum dot lasers epitaxially grown on Ge/Si substrates. Some devices maintain lasing oscillation after more than 2700 h of constant current stress at 30 °C, longer than any previous life tests of GaAs lasers epitaxially grown on silicon. No catastrophic failures were observed. The lasers were characterized to gain insight on the aging mechanism.
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