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Reliability of InAsGaAs Quantum Dot Lasers Epitaxially Grown on Silicon
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https://doi.org/10.1109/jstqe.2015.2418226Abstract
We present the first reliability study of InAs/GaAs self-assembled quantum dot lasers epitaxially grown on Ge/Si substrates. Some devices maintain lasing oscillation after more than 2700 h of constant current stress at 30 °C, longer than any previous life tests of GaAs lasers epitaxially grown on silicon. No catastrophic failures were observed. The lasers were characterized to gain insight on the aging mechanism.
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