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Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties

  • Author(s): Chobpattana, Varistha
  • Mates, Thomas E.
  • Mitchell, William J.
  • Zhang, Jack Y.
  • Stemmer, Susanne
  • et al.
Abstract

We report on the influence of variations in the process parameters of an in-situ surface cleaning procedure, consisting of alternating cycles of nitrogen plasma and trimethylaluminum dosing, on the interface trap density of highly scaled HfO2gate dielectrics deposited on n-In0.53Ga0.47As by atomic layer deposition. We discuss the interface chemistry of stacks resulting from the pre-deposition exposure to nitrogen plasma/trimethylaluminum cycles. Measurements of interface trap densities, interface chemistry, and surface morphology show that variations in the cleaning process have a large effect on nucleation and surface coverage, which in turn are crucial for achieving low interface state densities.

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