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Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors

  • Author(s): Kumar, S
  • Graves, CE
  • Strachan, JP
  • Grafals, EM
  • Kilcoyne, ALD
  • Tyliszczak, T
  • Weker, JN
  • Nishi, Y
  • Williams, RS
  • et al.
Abstract

© 2016 Wiley-VCH Verlag GmbH & Co. KGaA. Oxygen migration in tantalum oxide, a promising next-generation storage material, is studied using in operando X-ray absorption spectromicroscopy. This approach allows a physical description of the evolution of conduction channel and eventual device failure. The observed ring-like patterns of oxygen concentration are modeled using thermophoretic forces and Fick diffusion, establishing the critical role of temperature-driven oxygen migration.

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