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Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors.

  • Author(s): Kumar, Suhas
  • Graves, Catherine E
  • Strachan, John Paul
  • Grafals, Emmanuelle Merced
  • Kilcoyne, Arthur L David
  • Tyliszczak, Tolek
  • Weker, Johanna Nelson
  • Nishi, Yoshio
  • Williams, R Stanley
  • et al.
Abstract

Oxygen migration in tantalum oxide, a promising next-generation storage material, is studied using in operando X-ray absorption spectromicroscopy. This approach allows a physical description of the evolution of conduction channel and eventual device failure. The observed ring-like patterns of oxygen concentration are modeled using thermophoretic forces and Fick diffusion, establishing the critical role of temperature-driven oxygen migration.

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