Imaging interfacial electrical transport in graphene-MoS2heterostructures with electron-beam-induced-currents
- Author(s): White, ER
- Kerelsky, A
- Hubbard, WA
- Dhall, R
- Cronin, SB
- Mecklenburg, M
- Regan, BC
- et al.
Published Web Locationhttps://doi.org/10.1063/1.4936763
© 2015 AIP Publishing LLC. Heterostructure devices with specific and extraordinary properties can be fabricated by stacking two-dimensional crystals. Cleanliness at the inter-crystal interfaces within a heterostructure is crucial for maximizing device performance. However, because these interfaces are buried, characterizing their impact on device function is challenging. Here, we show that electron-beam induced current (EBIC) mapping can be used to image interfacial contamination and to characterize the quality of buried heterostructure interfaces with nanometer-scale spatial resolution. We applied EBIC and photocurrent imaging to map photo-sensitive graphene-MoS2heterostructures. The EBIC maps, together with concurrently acquired scanning transmission electron microscopy images, reveal how a device's photocurrent collection efficiency is adversely affected by nanoscale debris invisible to optical-resolution photocurrent mapping.
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